| Autor: |
Hashim, S. B., Mahzan, N. H., Herman, S. H., Noor, U. Mohd, Rusop, M. |
| Zdroj: |
2012 IEEE Symposium on Humanities, Science & Engineering Research; 1/ 1/2012, p879-882, 4p |
| Abstrakt: |
Polycrystalline silicon (poly-Si) thin film was successfully deposited on glass substrate without substrate heating using radiofrequency (RF) magnetron sputtering. The effect of RF power and substrate bias on the structural properties of the thin films was studied. The film thickness and the deposition rate increased with the increasing RF power. Raman spectroscopy results it showed that the peak was around 503 cm−1 from the deposition with 200W RF power, but when the substrate bias was applied, the peak was at 515 cm−1, showing that the thin film crystalline changed from nanocrystalline for the deposition without the substrate bias, to almost polycrystalline for the deposition with the substrate bias. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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