| Autor: |
Schwarzenbach, W., Daval, N., Kerdiles, S., Chabanne, G., Figuet, C., Guerroudj, S., Bonnin, O., Cauchy, X., Nguyen, B.-Y., Maleville, C. |
| Zdroj: |
2012 IEEE International Conference on IC Design & Technology; 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
Smart Cut™ technology is used to manufacture Strained-SOI (sSOI) substrates. These substrates are proposed to boost performance for both planar and FinFET Fully Depleted SOI devices. To comply with tight transistor variability requirements, strong emphasis has been put on layer thickness control and low stress variation. A 1.2 Å RMS roughness and less than 10% stress fluctuation are already demonstrated for sSOI wafers. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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