1200V SiC MOSFETS for high voltage power conversion.

Autor: Wu, Tao, Chen, Jifeng, Mao, Saijun, Schutten, Michael J.
Zdroj: 2012 IEEE Energy Conversion Congress & Exposition (ECCE); 1/ 1/2012, p2921-2926, 6p
Abstrakt: Recently, development and progress in information and telecommunications industry and service have gradually made significant increase in power consumption of Information and communication technology (ICT) equipment. To provide an energy-saving, floor space saving system solution for the data center or telecommunications, there exhibits a new trend moving towards high voltage power conversion. This paper presents a high voltage DC distribution power conversion using SiC MOSFET aiming at improving conversion efficiency. The characterization of SiC MOSFET is tested with double pulse and phase leg tests. A 5kW 380V DC rectifier is built and experimentally tested to compare the efficiency against the same prototype with Si device to demonstrate efficiency benefits. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index