| Autor: |
Tomkins, A., Dacquay, E., Chevalier, P., Hasch, J., Chantre, A., Sautreuil, B., Voinigescu, S. P. |
| Zdroj: |
2012 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
This paper investigates fundamental and push-push SiGe HBT voltage-controlled-oscillator topologies with and without doublers, as possible solutions for efficient milliwatt-level, low-noise signal sources at sub-millimeter wave frequencies. A fundamental frequency Colpitts VCO covers the 218–246 GHz range (the highest for SiGe HBTs) with up to −3.6 dBm output power and 0.8% efficiency. A Colpitts-Clapp VCO-doubler shows −1.7 dBm output power around 290 GHz, a record −101 dBc/Hz phase noise at 10 MHz offset, 7.5% tuning range and 0.4% efficiency. These efficiency numbers are 2–4 times higher than those of recently reported 300-GHz SiGe or CMOS sources based on multipliers or free-space power combining. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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