| Autor: |
Brocard, M., Le Maitre, P., Bermond, C., Bar, P., Anciant, R., Farcy, A., Lacrevaz, T., Leduc, P., Coudrain, P., Hotellier, N., Ben Jamaa, H., Cheramy, S., Sillon, N., Marin, J-C., Flechet, B. |
| Zdroj: |
2012 IEEE 62nd Electronic Components & Technology Conference; 1/ 1/2012, p665-672, 8p |
| Abstrakt: |
TSVs in 3D integrated circuits are a source of noise that can affect nearby transistor performance. So an analytical physics-based model of the TSV-to-substrate coupling is proposed to perform time domain or noise simulations. Silicon measurements at low frequencies and radiofrequencies are reported. Simulations are done using a software performing device and electromagnetic co-simulations. The model and simulations are validated by measurements. Simulations to study the sensitivity of the TSV structure to the layout show changes in the TSV-to-substrate coupling behavior. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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