| Autor: |
Malits, Maria, Svetlitza, Alex, Manzhosov, Evgeny, Rotman, Noa, Nemirovsky, Yael |
| Zdroj: |
2012 IEEE 27th Convention of Electrical & Electronics Engineers in Israel; 1/ 1/2012, p1-5, 5p |
| Abstrakt: |
In this study we use the measured threshold voltage as the “thermometer” to determine the true channel temperature. The self-heating effects are measured using a careful calibration of the process temperature dependent parameters such as the threshold voltage, mobility and non-ideality factor. It is shown that the temperature rise is significant, approximately 100K above room temperature, even for transistors with relatively low applied power (∼ 0.1 mWatt). The CMOS-SOI transistors were designed and fabricated using a standard partially depleted 180 nm CMOS-SOI process. The induced self-heating may result in higher device temperature than predicted by the conventional steady-state thermal analysis. Modeling based on channel's thermoelectric effects is applied to account for the observed local-heating. The results of this study have an impact on circuit design and may be extended to regular submicron CMOS technology. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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