| Autor: |
Chi, Chao-Jun, Wu, Li-Ji, Zhang, Xiang-Min, Pan, Li-Yang |
| Zdroj: |
2012 IEEE 11th International Conference on Solid-State & Integrated Circuit Technology; 1/ 1/2012, p1-3, 3p |
| Abstrakt: |
A 16 Kbits EEPROM is designed and taped out in a 0.35μm 40V BCD Embedded EEPROM automotive electronic process. Low power is achieved by optimizing sense amplifier (SA) and other readout circuit. A low power 64 Kbits 3V only EEPROM is designed and will be taped out soon. It uses an improved on chip high-voltage generator. By using dynamic charge transfer switches, a high performance 3-V-to-14-V charge pump is designed. At read action, the power consumption of the 16 Kbits EEPROM is 0.8mA while the 64 Kbits 3V only EEPROM is 1.3mA. A variety of operating modes are designed to reduce operating time and improve testability. The EEPROM can operate in a broad range of temperature and voltage, it is applicable for automobile. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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