| Autor: |
Surya Raveendran, E., Suja, K J, Komaragiri, Rama |
| Zdroj: |
2012 Annual IEEE India Conference (INDICON); 1/ 1/2012, p742-746, 5p |
| Abstrakt: |
This work focuses on the modeling of MEMS piezoresistive pressure sensors with two different diaphragms, one with silicon and the second with silicon and silicon dioxide stack using FEM software Intellisuite®, and comparing the performance parameters of the two sensors. The diaphragm deflection in Silicon pressure sensor was found to be more and exhibit more stress at the edges when compared to SOI pressure sensors. The thickness of SOI layer plays an integral part of sensor design. Moreover the SOI pressure sensor was able to operate at large pressures by changing the dimension of the diaphragm. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
