| Autor: |
Liang, Haifan, Liu, Wei, Lee, Sang, van Duren, Jeroen, Franklin, Tim, Patten, Michael, Nijhawan, Sandeep |
| Zdroj: |
2012 38th IEEE Photovoltaic Specialists Conference; 1/ 1/2012, p003102-003107, 6p |
| Abstrakt: |
Cu(In1−x,Gax)Se2 (CIGSe) based solar cells were fabricated using a sulfur-free sequential process. Combinatorial sputtering of Cu, In, and Ga results in a broad range in Cu/(In+Ga), Ga/(In+Ga), and thickness within one sample, allowing an accelerated learning curve to form high quality CIGSe by selenization. A high Ga content at the CIGSe surface allows for high efficiency and Voc. The structural and optoelectronic properties of the absorber were characterized by SIMS, XRF, SEM, XRD and PL. EQE results confirmed a high band gap (∼1.12eV) of the absorber surface. Voc of 692mV was achieved with best cell efficiency of 17.7%. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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