| Autor: |
Septina, Wilman, Ikeda, Shigeru, Kyoraiseki, Akio, Harada, Takashi, Matsumura, Michio |
| Zdroj: |
2012 38th IEEE Photovoltaic Specialists Conference; 1/ 1/2012, p002702-002706, 5p |
| Abstrakt: |
Cu2ZnSn(S,Se)4 thin film has been fabricated by sulfurization of a novel single-step electrodeposited Cu-Zn-Sn-Se precursor. Based on EDX analysis of the precursor film, the atomic percentages of Cu, Zn, Sn and Se measured to be 38.48%, 11.53%, 13.62% and 36.37%, respectively. The A1 Raman mode of Cu2ZnSnSe4 was detected from the film which suggests the formation of the quaternary compound during the deposition. Annealing of the precursor film at 550 °C under H2S-gas flow resulted in the formation of crystalline Cu2ZnSn(S,Se)4 compound. Photoelectrochemical measurement of the film revealed that the Cu2ZnSn(S,Se)4 thus-obtained had a p-type semiconductor photoresponse with the band gap energy of 1.48 eV. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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