Asymmetric tunneling metal-insulator-metal diode for high frequency application.

Autor: Jeong Hee Shin, Jaehan Im, Sang-Sik Shin, Inho Choi, Ji-Woong Choi, Jang, Jae Eun
Zdroj: 2012 37th International Conference on Infrared, Millimeter & Terahertz Waves; 1/ 1/2012, p1-3, 3p
Abstrakt: To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index