Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy.
| Autor: | Lunak, M., Chobola, Z., Vanek, J., Hulicius, E. |
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| Zdroj: | 2012 28th International Conference on Microelectronics Proceedings; 1/ 1/2012, p343-346, 4p |
| Abstrakt: | Transport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology. [ABSTRACT FROM PUBLISHER] |
| Databáze: | Complementary Index |
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