| Autor: |
Hastas, Nikolaos, Tsormpatzoglou, Andreas, Pappas, Ilias, Kouvatsos, Dimitrios N., Moschou, Despina C., Voutsas, Apostolos T., Dimitriadis, Charalabos A. |
| Zdroj: |
2012 28th International Conference on Microelectronics Proceedings; 1/ 1/2012, p339-342, 4p |
| Abstrakt: |
Low frequency drain current fluctuation noise was measured in two types of polysilicon double gate thin film transistors fabricated by sequential lateral solidification technique keeping the back gate grounded. In X-oriented devices, the grain boundaries are parallel to the drain current flow, while in Y-oriented devices the grain boundaries are lying perpendicular to the drain current flow. The noise spectra consist of generation-recombination (g-r) and flicker noise components. In X-oriented TFTs the g-r centers are related to bulk traps located in the grains, whereas in Y-oriented TFTs the g-r centers correspond to grain boundary traps in addition to bulk traps in the grains. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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