| Autor: |
Nagai, Shuichi, Fukuda, Takeshi, Otsuka, Nobuyuki, Ueda, Daisuke, Negoro, Noboru, Sakai, Hiroyuki, Ueda, Tetsuzo, Tanaka, Tsuyoshi |
| Zdroj: |
2012 24th International Symposium on Power Semiconductor Devices & ICs; 1/ 1/2012, p73-76, 4p |
| Abstrakt: |
The isolated direct gate driver with Drive-by-Microwave technologies can directly drive a power switching device by wireless power transmission of RF modulated signal through the electromagnetic resonant coupler and requires no additional isolated voltage source. In order to improve the performance such as a fall time characteristic and a power consumption of the gate driver, a new direct gate driver using a SPDT switch is proposed, which can effectively switch the inter-channels for the positive and negative voltage outputs. The fabricated GaN single-chip direct gate driver realized 2.0Mbps signal isolation and successfully drove a GaN power switching device with a very fast fall time by the negative voltage output for off-state. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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