| Autor: |
Rahou, FZ., Guen.Bouazza, A., Rahou, M. |
| Zdroj: |
2012 24th International Conference on Microelectronics (ICM); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
In this paper we briefly present SOI MOSFET transistor and problems generated at high-temperature and self-heating effects, then we present simulation results we obtained using SILVACO TCAD tools relating to SOI n-MOSFET structures we have consider. We will also exhibit some simulation results we obtained relating to the influence of temperature variation on our structure, that having a direct impact on their drain current. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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