| Autor: |
Escid, H., Gachi, N., Sebti, A., Slimane, A. |
| Zdroj: |
2012 24th International Conference on Microelectronics (ICM); 1/ 1/2012, p1-4, 4p |
| Abstrakt: |
This paper presents a transimpedance amplifier for photoreceiver circuit. The proposed structure operates at a data rate of 10 Gb/s at a BER of 10−12 and was implemented in a 0.18 µm CMOS process. The structure achieves a wide bandwidth (6.3 GHz). We used NMOS transistors as active resistor to increase bandwidth and to reduce noise level. With a photodiode capacitance of 0.25 pF, the proposed TIA has a gain of 60 dBΩ, a phase margin of 56°, and an input courant noise level of about 23 pA/Hz0.5. It consumes a DC power of 21.2 mW from 1.8 V supply voltage. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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