The thermal effect on the output conductance in AlGaN/GaN HEMT's.

Autor: Bellakhdar, A., Telia, A., Semra, L., Soltani, A.
Zdroj: 2012 24th International Conference on Microelectronics (ICM); 1/ 1/2012, p1-4, 4p
Abstrakt: The aim of this work is to study the potential offered by microwave power in the device AlGaN/GaN HEMT by studying the thermal effect and self heating on the output conductance taking into account the effects of spontaneous and piezoelectric polarization. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index