Autor: |
de la Fuente Vornbrock, Alejandro, Almanza-Workman, Marcia, Dickin, Fraser, Elder, Richard E., Garcia, Robert A., Holland, Edward, Jackson, Warren, Jam, Mehrban, Jeans, Albert, Kim, Han-Jun, Luo, Hao, Kwon, Ohseung, Maltabes, John, Mei, Ping, Perlov, Craig, Rudin, John C., Smith, Mark, Trovinger, Steven, Zhao, Lihua, Taussig, Carl P. |
Zdroj: |
2012 19th International Workshop on Active-Matrix Flatpanel Displays & Devices (AM-FPD); 1/ 1/2012, p57-60, 4p |
Abstrakt: |
Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies. [ABSTRACT FROM PUBLISHER] |
Databáze: |
Complementary Index |
Externí odkaz: |
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