| Autor: |
Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, Paruchuri, Vamsi |
| Zdroj: |
2012 12th International Workshop on Junction Technology; 1/ 1/2012, p210-215, 6p |
| Abstrakt: |
Formation of heavy C and/or P doping Si alloy with a strain and/or low resistivity in FinFET S/D having only {110} plane on fin sidewall poses a challenge because, if the CVD selective epitaxy typically used in recent S/D process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {110} crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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