| Autor: |
Zhang, Bo, Yu, Wenjie, Zhao, Qingtai, Mussler, Gregor, Buca, Dan, Hollander, Bernhard, Mantl, Siegfried, Zhang, Miao |
| Zdroj: |
2012 12th International Workshop on Junction Technology; 1/ 1/2012, p203-205, 3p |
| Abstrakt: |
Epitaxial growth of Ni germanosilicide on relaxed SiGe (30% Ge content) substrate has been achieved by using 3 nm Al interlayer. This epitaxial layer shows a very good uniformity and smooth interface and surface. The epitaxial layer and the SiGe substrate match very well and no misfit dislocation is found at the interface. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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