| Autor: |
Yi, Chew Pei, Heng, You Ah, Raghavan, Vijayaram Thoguluva |
| Zdroj: |
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE); 1/ 1/2012, p426-430, 5p |
| Abstrakt: |
Pure Cu is prepared using by Powder Metallurgical (PM) method in order to study the impact of different sintering environment (with vacuum, N2 and N2 + H2) and at different temperatures (1010 °C and 1080 °C) towards its surface and inner morphology, crystal structure and electrical properties. These samples are compacted at a constant pressure of 280 MPa in order to form a pellet with a dimension of 17.7 mm in diameter and about 10–15 mm in height. Cu pellet in vacuum sintering environment is detected with pores in the inner and outer surface of the pellet formed with PM method under SEM. PM method is able to form Cu pellet with electrical conductivity of up to ∼ 1.50 × 107 ΩΓ1 m1 which is within the electrical conductive range of Cu for lead frame and other electronic applications. This can be further explained through XRD analysis to understand the crystal structure and the SEM results on the grain structure in the Cu pellets. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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