| Autor: |
Ismail, Muhamad Amri, Bakar, Mohd Hezri Abu, Nasir, Iskhandar Md |
| Zdroj: |
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE); 1/ 1/2012, p263-266, 4p |
| Abstrakt: |
Predictive TCAD tool is crucial for several reasons such as to provide pre-silicon data, shorten the technology development cycle and reduce the fabrication cost. This paper presents a methodology for TCAD advanced calibration of MOSFET particularly on critical electrical parameters during device simulations. A few physical device model parameters have been experimented to solve the inaccuracy issues due to the default values. The comparisons between measured and simulated data of electrical parameters are presented for the verification purpose. It is proven that modifying the surface mobility, high-field saturation and band-to-band models had been successful in significantly improved the TCAD accuracy. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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