| Autor: |
Kim, Ye-Ram, Lee, Sang-Hyun, Baek, Chang-Ki, Baek, Rock-Hyun, Yeo, Kyoung-Hwan, Kim, Dong-Won, Lee, Jeong-Soo, Jeong, Yoon-Ha |
| Zdroj: |
2011 IEEE Nanotechnology Materials & Devices Conference; 1/ 1/2011, p262-265, 4p |
| Abstrakt: |
Series resistance (Rsd) and mobility attenuation factors (θ1, and (θ2) of silicon nanowire FET (NWFET) are simultaneously extracted using Tanaka method (YФ method) and Y-function technique. Consecutively, simulated drain current (Id) and transconductance (gm) is precisely fitted to the measured data with the extracted (θ1, (θ2, and Rsd. Significantly reduced mobility degradation due to volume inversion effect makes the Rsd values extracted from both the Y-function technique and the YФ method practically the same. It is quantitatively confirmed that the Y-function technique assuming constant mobility is quite reliable to extract Rsd. Moreover, the dependence of the Rsd on the channel diameter (dnw) and the doping condition (n-, p-type) is investigated. It is shown that extension resistance (Rext) increases as dnw decreases and Rsd of p-type NWFET is smaller than that of n-type NWFET. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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