| Autor: |
Perez-Mariano, Jordi, Leung, Tammy, Moro, Lorenza, Gleixner, Stacy, Lau, Kai, Chavez, Bryan, Hornbostel, Marc, Sanjurjo, Angel |
| Zdroj: |
2011 37th IEEE Photovoltaic Specialists Conference; 1/ 1/2011, p003068-003072, 5p |
| Abstrakt: |
Thin film polycrystalline solar cells on low cost substrates offer an attractive path to large scale production of solar cells with the potential to generate electricity at 1$/W. SRI International has a propriety technology to deposit Si films in a reactor based on fluidized bed technology. The results presented in this paper show that, with a proper reactor design, Si films can be grown at rates of 7 μm/min and higher. Films are crystalline, with crystallite sizes higher than 20 μm. We have also evaluated the performance of SiO2 diffusion barriers as a potential way towards the use of low cost substrates, such as metallurgical grade Si. Whereas SiO2 layers of 0.1 μm are not sufficient to stop P diffusion from the substrate to the film, 0.7 μm layers are thick enough to accomplish this goal. The reactor configuration can be used for continuous and integrated cell/panel fabrication. At present we are building a first continuous reactor, and in this paper we present some preliminary considerations. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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