| Autor: |
Horsley, K., Pookpanratana, S., Krause, S., Hofmann, T., Blum, M., Weinhardt, L., Bar, M., George, K., Van Duren, J., Jackrel, D., Heske, C. |
| Zdroj: |
2011 37th IEEE Photovoltaic Specialists Conference; 1/ 1/2011, p000374-000378, 5p |
| Abstrakt: |
We have investigated the electronic and chemical surface properties of a Cu(In1−xGax)Se2 (CIGSe) thin-film solar cell absorber and a CdS/CIGSe interface sample taken from Nanosolar's manufacturing line. Using soft x-ray and UV photoelectron spectroscopy, inverse photoemission, and soft x-ray emission spectroscopy employing high-brilliance synchrotron radiation, we have determined the chemical composition of the surface and near-surface bulk, as well as some of the relevant electronic structure parameters (e.g., the surface band gap of the absorber). We find that the (previously air-exposed) surfaces show a surprisingly low degree of carbon-containing surface adsorbates, the presence of sodium and selenium oxide species on the surface of both samples, a significant S/Se intermixing at the CdS/CIGSe interface, and, as is common for high-efficiency CIGSe absorbers after surface cleaning, an electronic surface band gap (1.45 ± 0.15 eV) that is noticeably larger than the optical bulk band gap. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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