| Autor: |
Liu, Sandra, Marec, Ronan, Sherman, Phillip, Titus, Jeffrey L., Bezerra, Francoise, Ferlet-Cavrois, Veronique, Marin, Marc, Sukhaseum, Nicolas, Widmer, Fabien, Muschitiello, Michele, Gouyet, Lionel, Ecoffet, Robert, Zafrani, Max |
| Zdroj: |
2011 12th European Conference on Radiation & Its Effects on Components & Systems; 1/ 1/2011, p656-660, 5p |
| Abstrakt: |
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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