| Autor: |
Murali, Santosh, Rajachidambaram, Jaana Saranya, Han, Seung-Yeol, Chang, Chih-Hung, Herman, Gregory S., Conley, John F. |
| Zdroj: |
2011 11th IEEE International Conference on Nanotechnology; 1/ 1/2011, p740-743, 4p |
| Abstrakt: |
Bipolar switching is reported for the first time using solution deposited amorphous zinc-tin-oxide (ZTO). The impact of compliance current (CC) on the SET voltage, the magnitude of the low and high resistance states, and the switching ratio is investigated for Al/ZTO/Ir resistive random access memory (RRAM) devices. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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