| Autor: |
Trivedi, Samarth, Grebel, Haim |
| Zdroj: |
2011 11th IEEE International Conference on Nanotechnology; 1/ 1/2011, p1584-1587, 4p |
| Abstrakt: |
Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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