Dual-band 1.7 GHz / 2.5 GHz class-E power amplifier in 130 nm CMOS technology.

Autor: Kalim, Danish, Fatemi, Adel, Negra, Renato
Zdroj: 10th IEEE International NEWCAS Conference; 1/ 1/2012, p473-476, 4p
Abstrakt: The evolution of new mobile communication standards demand highly efficient multiband power amplifiers (PAs) both in mobile equipments and base stations. This paper presents a concept for a compact multiharmonic load transformation network (MHLTN), appropriate for a fully integrated differential dual-band PA design in an RF front-end transmitter. The proposed MHLTN was applied to implement a dual-band class-E PA based on finite DC-feed inductance in a 130nm CMOS process for GSM1700 and LTE2500 operation. With a dual-band input matching network, simulation results have shown peak power added efficiency (PAE) and peak output power of more than 57% and 27 dBm, respectively, at both bands. The designed PA is also able to cover a wide frequency range. From 1.4GHz to 2.7 GHz, output power is above 25dBm and PAE is higher than 50 %. [ABSTRACT FROM PUBLISHER]
Databáze: Complementary Index