| Autor: |
Alam, E. Al, Cortés, I., Besland, M.-P., Goullet, A., Lajaunie, L., Regreny, P., Cordier, Y., Brault, J., Cazarré, A., Isoird, K., Sarrabayrouse, G., Morancho, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Apr2011, Vol. 109 Issue 8, p084511, 9p, 1 Black and White Photograph, 2 Diagrams, 3 Charts, 8 Graphs |
| Abstrakt: |
In this work, SiO2/GaN MOS structures have been fabricated using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of silicon dioxide (SiO2) at low temperature (300 °C) on N-type, NID and P-type GaN epitaxial layers. Surface preparation involving chemical, UV-Ozone oxidation and oxygen plasma oxidation have been investigated by XPS analysis of the GaN surfaces prior to SiO2 deposition. The association of UV ozone and plasma oxidation allows a complete removal of carbon contamination and has a huge beneficial effect on the quality of the SiO2/GaN interface. Electrical C-V characterizations put into evidence the improved quality of the SiO2/GaN interface with a low interface trap density of 1010 cm-2 eV-1. The advantage of this soft interface treatment is thus specially observed for the N-type samples without annealing step, whereas improvements are still needed in the case of NID and P-type samples. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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