| Autor: |
Elyukhin, V. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Apr2011, Vol. 109 Issue 8, p086105, 3p, 3 Graphs |
| Abstrakt: |
Carbon and Sn co-doping transforms Ge into Ge-rich CxSnyGe1-x-y alloy. Self-assembling of 1C4Sn and 4C10Sn clusters decreases the strain energy. These cluster formation processes are competing. The self-assembling conditions of 1C4Sn and 4C10Sn clusters are represented from 0 °C to 800 °C and at 5 × 10-5 ≤ x ≤ 0.015 and 1 × 10-4 ≤ y ≤ 0.015. The conditions demonstrate that only 1C4Sn clusters form if carbon is a minority impurity. Both types of clusters with the preferential formation of 4C10Sn clusters over 1C4Sn occur if the impurity concentrations are nearly equal or if Sn is a minority impurity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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