Demonstration of efficient p-type doping in AlxGa1–xN/GaN superlattice structures.
| Autor: | Goepfert, I.D., Schubert, E.F., Osinsky, A., Norris, P.E. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 06/24/1999, Vol. 35 Issue 13, p1109-1111, 3p |
| Databáze: | Complementary Index |
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