InP-based 1.5 µm vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors.
| Autor: | Gebretsadik, H., Bhattacharya, P.K., Kamath, K.K., Qasaimeh, O.R., Klotzkin, D.J., Caneau, C., Bhat, R. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 06/25/1998, Vol. 34 Issue 13, p1316-1318, 3p |
| Databáze: | Complementary Index |
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