Heterojunction tunnelling model for PNP and NPN polysilicon emitter bipolar transistors.
Autor: | Post, I.R.C., Ashburn, P., Nouailhat, A. |
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Zdroj: | Electronics Letters (Institution of Engineering & Technology); 12/03/1992, Vol. 28 Issue 25, p2276-2277, 2p |
Databáze: | Complementary Index |
Externí odkaz: |