Heterojunction tunnelling model for PNP and NPN polysilicon emitter bipolar transistors.

Autor: Post, I.R.C., Ashburn, P., Nouailhat, A.
Zdroj: Electronics Letters (Institution of Engineering & Technology); 12/03/1992, Vol. 28 Issue 25, p2276-2277, 2p
Databáze: Complementary Index