High-efficiency GaAs microwave power MESFETs with an n+n−n doping formed by buried-shallow-implant (BSI).
| Autor: | Liu, S.G., Taylor, G.C., Klatskin, J., Camisa, R.L., Capewell, D.R. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 08/16/1990, Vol. 26 Issue 17, p1373-1374, 2p |
| Databáze: | Complementary Index |
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