Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy.
| Autor: | Scott, E.G., Davey, S.T., Davies, G.J. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 07/02/1987, Vol. 23 Issue 14, p761-763, 3p |
| Databáze: | Complementary Index |
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