1.3 μm InP/InGaAsP channelled-substrate buried-heterostructure laser monolithically integrated with a photodetector.

Autor: Koszi, L.A., Chin, A.K., Segner, B.P., Shen, T.M., Dutta, N.K.
Zdroj: Electronics Letters (Institution of Engineering & Technology); 12/05/1985, Vol. 21 Issue 25/26, p1209-1210, 2p
Databáze: Complementary Index