Modifications to MOS transistor model CASMOS for increased accuracy of DC simulations of heavily channel-doped n-MOS devices.
| Autor: | Brassington, M.P., Duckworth, C.N. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 06/09/1983, Vol. 19 Issue 12, p447-449, 3p |
| Databáze: | Complementary Index |
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