Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors.
| Autor: | Sodini, D., Touboul, A., Lecoy, G., Savelli, M. |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology); 01/22/1976, Vol. 12 Issue 2, p42-43, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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