Growth and characterisation of GaInAsP/InP double heterostructure material for stripe-geometry lasers emitting near 1.3μm.

Autor: Hersee, S.D., Carter, A.C., Goodfellow, R.C., Hawkins, G., Griffith, I.
Zdroj: IEE Journal on Solid-State & Electron Devices; Nov1979, Vol. 3 Issue 6, p179-185, 7p
Databáze: Complementary Index