Design and evaluation of a novel enhancement mode FET logic gate configuration in AlGaAs/GaAs/AlGaAs quantum well HEMT technology.
| Autor: | Bushehri, E., Thiede, A., Bratov, V., Staroselsky, V., Rieger-Motzer, M., Huelsmann, A., Schlichter, T., Raynor, B. |
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| Zdroj: | IEE Proceedings -- Circuits, Devices & Systems; Aug1997, Vol. 144 Issue 4, p243-246, 4p |
| Databáze: | Complementary Index |
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