| Autor: |
Eun Lee, Jeong, Sharma, Bhupendra K., Lee, Seoung-Ki, Jeon, Haseok, Hee Hong, Byung, Lee, Hoo-Jeong, Ahn, Jong-Hyun |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/18/2013, Vol. 102 Issue 11, p113112, 5p, 1 Black and White Photograph, 1 Chart, 3 Graphs |
| Abstrakt: |
The excellent impermeability of graphene was exploited to produce stable ohmic contact at the interface between Al metal and a semiconducting indium gallium zinc oxide (IGZO) layer after high-temperature annealing. Thin film transistors (TFTs) were fabricated with and without a graphene interlayer between the Al metal and the IGZO channel region. Metal contact at the interface prepared without a graphene interlayer showed serious instabilities in the IGZO TFT under thermal annealing; however, the insertion of a graphene interlayer between the IGZO channel and the Al metal offered good stability under repeated high-temperature annealing cycles and maintained ohmic contact. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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