| Autor: |
Py, Matthieu, Barnes, Jean-Paul, Boujamaa, Rachid, Gros-Jean, Michael, Nakajima, Kaoru, Kimura, Kenji, Roukoss, Charbel, Pelissier, Bernard, Gambacorti, Narciso |
| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2011, Vol. 29 Issue 3, p032208-1-032208-9, 9p |
| Abstrakt: |
Elemental concentration depth profiles of high-k material stacks for 32 nm node devices and below were acquired by high resolution backscattering spectrometry (HRBS), parallel angle resolved-x-ray photoelectron spectroscopy (pAR-XPS), and time of flight—secondary ion mass spectrometry (ToF-SIMS). ToF-SIMS data were analyzed using an original calibration method which the authors shall refer to as the full spectrum protocol. Three different samples were studied in this work, one ultrathin insulating layer (IL) alone and two nitridized high-k/IL samples with different nitridation conditions for the IL. Although HRBS and AR-XPS already proved their ability in this domain, SIMS or ToF-SIMS characterization of high-k material stacks is still hampered by various matrix effects. Comparison of the elemental profiles obtained by all three techniques allows the accuracy of the full spectrum ToF-SIMS protocol to be assessed, both in terms of chemical composition quantification and depth resolution. This study reveals the feasibility of quantitative and depth resolved ToF-SIMS profiling of ultrathin high-k material stacks. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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