Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates.

Autor: Steinman, E A, Vdovin, V I, Yugova, T G, Avrutin, V S, Izyumskaya, N F
Zdroj: Semiconductor Science & Technology; 1999, Vol. 14 Issue 6, p582-588, 7p
Databáze: Complementary Index