Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates.
Autor: | Steinman, E A, Vdovin, V I, Yugova, T G, Avrutin, V S, Izyumskaya, N F |
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Zdroj: | Semiconductor Science & Technology; 1999, Vol. 14 Issue 6, p582-588, 7p |
Databáze: | Complementary Index |
Externí odkaz: |