MBE growth and characterization of magnesium-doped gallium nitride.

Autor: Dewsnip, D J, Orton, J W, Lacklison, D E, Flannery, L, Andrianov, A V, Harrison, I, Hooper, S E, Cheng, T S, Foxon, C T, Novikov, S N, Ber, B Ya, Kudriavtsev, Yu A
Zdroj: Semiconductor Science & Technology; 1998, Vol. 13 Issue 8, p927-935, 9p
Databáze: Complementary Index