Electrical properties of lateral p - n junctions formed on patterned (110) GaAs substrates.

Autor: Gardner, N R, Woods, N J, Domínguez, P S, Tok, E S, Norman, C E, Harris, J J
Zdroj: Semiconductor Science & Technology; 1997, Vol. 12 Issue 6, p737-741, 5p
Databáze: Complementary Index