A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation.
| Autor: | Chain, Kenneth, Huang, Jian-hui, Duster, Jon, Ko, Ping K, Hu, Chenming |
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| Zdroj: | Semiconductor Science & Technology; 1997, Vol. 12 Issue 4, p355-358, 4p |
| Databáze: | Complementary Index |
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