Determination of the critical thickness of misfit dislocation multiplication using in situ double-crystal x-ray diffraction.
| Autor: | M�ck, P, Tanner, B K, Li, C R, Keir, A M, Johnson, A D, Lacey, G, Clark, G F, Lunn, B, Hogg, J C H |
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| Zdroj: | Semiconductor Science & Technology; 1996, Vol. 11 Issue 7, p1051-1055, 5p |
| Databáze: | Complementary Index |
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