A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon.
| Autor: | McGuigan, K G, Henry, M O, Campion, J D, Daly, S E, McGlynn, E, Carmo, M C Do |
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| Zdroj: | Semiconductor Science & Technology; 1996, Vol. 11 Issue 6, p930-934, 5p |
| Databáze: | Complementary Index |
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