Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers.

Autor: Couch, N R, Kelly, M J, Kerr, T M, Britton, E G, Stobbs, W M
Zdroj: Semiconductor Science & Technology; 1987, Vol. 2 Issue 4, p244-247, 4p
Databáze: Complementary Index